First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

The Peierls stress of the a/2 screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary conditions by using two models, the supercell method where one considers a periodic array of dislocations, and the cluster method where a single dislocation is embedded in a small cluster. The Peierls stress is underestimated with the supercell and overestimated with the cluster. These contributions have been calculated and the Peierls stress is determined in the range between 2.4 x 10-2 and 2.8 x 10-2 eV {\AA}-3. When moving, the dislocation follows the {111} plane going through a low energy metastable configuration and never follows the 100 plane, which includes a higher energy metastable core configuration

Slip line growth as a critical phenomenon

We study the growth of slip line in a plastically deforming crystal by numerical simulation of a double-ended pile-up model with a dislocation source at one end, and an absorbing wall at the other end. In presence of defects, the pile-up undergoes a second order non-equilibrium phase transition as a function of stress, which can be characterized by finite size scaling. We obtain a complete set of critical exponents and scaling functions that describe the spatiotemporal dynamics of the slip line. Our findings allow to reinterpret earlier experiments on slip line kinematography as evidence of a dynamic critical phenomenon.Comment: 4 pages, 4 figure

Dislocation core field. I. Modeling in anisotropic linear elasticity theory

Aside from the Volterra field, dislocations create a core field, which can be modeled in linear anisotropic elasticity theory with force and dislocation dipoles. We derive an expression of the elastic energy of a dislocation taking full account of its core field and show that no cross term exists between the Volterra and the core fields. We also obtain the contribution of the core field to the dislocation interaction energy with an external stress, thus showing that dislocation can interact with a pressure. The additional force that derives from this core field contribution is proportional to the gradient of the applied stress. Such a supplementary force on dislocations may be important in high stress gradient regions, such as close to a crack tip or in a dislocation pile-up

Mesoscopic Analysis of Structure and Strength of Dislocation Junctions in FCC Metals

We develop a finite element based dislocation dynamics model to simulate the structure and strength of dislocation junctions in FCC crystals. The model is based on anisotropic elasticity theory supplemented by the explicit inclusion of the separation of perfect dislocations into partial dislocations bounding a stacking fault. We demonstrate that the model reproduces in precise detail the structure of the Lomer-Cottrell lock already obtained from atomistic simulations. In light of this success, we also examine the strength of junctions culminating in a stress-strength diagram which is the locus of points in stress space corresponding to dissolution of the junction.Comment: 9 Pages + 4 Figure

Dislocation Core Energies and Core Fields from First Principles

Ab initio calculations in bcc iron show that a screw dislocation induces a short-range dilatation field in addition to the Volterra elastic field. This core field is modeled in anisotropic elastic theory using force dipoles. The elastic modeling thus better reproduces the atom displacements observed in ab initio calculations. Including this core field in the computation of the elastic energy allows deriving a core energy which converges faster with the cell size, thus leading to a result which does not depend on the geometry of the dislocation array used for the simulation.Comment: DOI: 10.1103/PhysRevLett.102.05550

Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects

We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a strong distance dependence within 4 nm of the defect with the strongest energetic fluctuations equaling up to 100 meV. These localized perturbations show large spatially-dependent asymmetries in the LDOS around the defect site for each corresponding quantum well state. These energetic fluctuations can be described by a simple model which accounts for fluctuations in the confinement potential induced by topographic changes.Comment: Updated Versio

Modelling two-dimensional Crystals with Defects under Stress: Superelongation of Carbon Nanotubes at high Temperatures

We calculate analytically the phase diagram of a two-dimensional square crystal and its wrapped version with defects under external homogeneous stress as a function of temperature using a simple elastic lattice model that allows for defect formation. The temperature dependence turns out to be very weak. The results are relevant for recent stress experiments on carbon nanotubes. Under increasing stress, we find a crossover regime which we identify with a cracking transition that is almost independent of temperature. Furthermore, we find an almost stress-independent melting point. In addition, we derive an enhanced ductility with relative strains before cracking between 200-400%, in agreement with carbon nanotube experiments. The specific values depend on the Poisson ratio and the angle between the external force and the crystal axes. We give arguments that the results for carbon nanotubes are not much different to the wrapped square crystal.Comment: 12 pages, 6 eps figures, section VI added discussing the modifications of our model when applied to tube

Ground state of a large number of particles on a frozen topography

Problems consisting in finding the ground state of particles interacting with a given potential constrained to move on a particular geometry are surprisingly difficult. Explicit solutions have been found for small numbers of particles by the use of numerical methods in some particular cases such as particles on a sphere and to a much lesser extent on a torus. In this paper we propose a general solution to the problem in the opposite limit of a very large number of particles M by expressing the energy as an expansion in M whose coefficients can be minimized by a geometrical ansatz. The solution is remarkably universal with respect to the geometry and the interaction potential. Explicit solutions for the sphere and the torus are provided. The paper concludes with several predictions that could be verified by further theoretical or numerical work.Comment: 9 pages, 9 figures, LaTeX fil

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocations. The character of the dislocation nucleated can be predicted considering both the resolved shear stress related to the applied stress orientation and the Peierls stress. At low temperature, only glide events in the shuffle set planes are observed. Then they progressively disappear and are replaced by amorphization/melting zones at a temperature higher than 900 K

Voltage from mechanical stress in type-II superconductors: Depinning of the magnetic flux by moving dislocations

Mechanical stress causes motion of defects in solids. We show that in a type-II superconductor a moving dislocation generates a pattern of current that exerts the depinning force on the surrounding vortex lattice. Concentration of dislocations and the mechanical stress needed to produce critical depinning currents are shown to be within practical range. When external magnetic field and transport current are present this effect generates voltage across the superconductor. Thus a superconductor can serve as an electrical sensor of the mechanical stress.Comment: 3 pages, 1 figure